USING RAPID THERMAL PROCESSING TO INDUCE EPITAXIAL ALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ON (100) SILICON

USING RAPID THERMAL PROCESSING TO INDUCE EPITAXIAL ALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ON (100) SILICON

著者名:

掲載資料名:

Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

71

発行年:

1986

開始ページ:

455

終了ページ:

458

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837371 [0931837375]

言語:

英語

請求記号:

M23500/71

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015557
シリーズID:	PA00000011
会議名:	Symposium on materials issues in silicon integrated circuit processing
回次:	1986
会議開催地:	Palo Alto, CA, USA
会議開催年:	1986.04.15-1986.04.18

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