ELECTRICAL CHARACTERISTICS OF SILICON p+n DIODES FABRICATED BY B+ IMPLANTATION AND RAPID THERMAL ANNEALING IN THE TEMPERATURE RANGE 700-1000°C

ELECTRICAL CHARACTERISTICS OF SILICON p+n DIODES FABRICATED BY B+ IMPLANTATION AND RAPID THERMAL ANNEALING IN THE TEMPERATURE RANGE 700-1000°C

著者名:

掲載資料名:

Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

71

発行年:

1986

開始ページ:

211

終了ページ:

216

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837371 [0931837375]

言語:

英語

請求記号:

M23500/71

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015557
シリーズID:	PA00000011
会議名:	Symposium on materials issues in silicon integrated circuit processing
回次:	1986
会議開催地:	Palo Alto, CA, USA
会議開催年:	1986.04.15-1986.04.18

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