INITIAL STAGES OF EPITAXIAL GROWTH OF GaAS ON (100) SILICON

INITIAL STAGES OF EPITAXIAL GROWTH OF GaAS ON (100) SILICON

著者名:

掲載資料名:

Heteroepitaxy on silicon : symposium held April 16-18, 1986, Palo Alto, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

67

発行年:

1986

開始ページ:

45

終了ページ:

52

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837333 [0931837332]

言語:

英語

請求記号:

M23500/67

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015553
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1986
会議開催地:	Palo Alto, CA, USA
会議開催年:	1986.04.16-1986.04.18

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