ELECTRICAL TRANPORT STUDIES OF THE HYDROGEN-RELATED COMPENSATION DONOR IN B-DOPED SILICON DIODES

ELECTRICAL TRANPORT STUDIES OF THE HYDROGEN-RELATED COMPENSATION DONOR IN B-DOPED SILICON DIODES

著者名:

掲載資料名:

Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

59

発行年:

1986

開始ページ:

469

終了ページ:

474

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837241 [0931837243]

言語:

英語

請求記号:

M23500/59

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015545
シリーズID:	PA00000011
会議名:	Symposium on oxygen, carbon, hydrogen, and nitrogen in crystalline silicon
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.05

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2 国際会議録 HYDROGEN IN SILICON-UNANSWERED QUESTIONS Pearton S.J. Materials Research Society	8 国際会議録 Hydrogenation of III-V Semiconductors During Processing Pearton,S.J. Trans Tech Publications
3 国際会議録 HYDROGEN IN CRYSTALLINE SILICON Pearton S.J. Materials Research Society	9 国際会議録 Hydrogen Donors in ZnO McCluskey, M.D., Jokela, S.J., Oo, W.M. Hlaing Materials Research Society
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6 国際会議録 Oxygen-Related Donors in Germanium doped Czochralski Silicon Yang, D., Li, H., Yu, X., Ma, X., Tian, D., Li, L., Qua, S. Electrochemical Society	12 国際会議録 Sensitivity of Pt/ZnO Schottky Diode Characteristics to Hydrogen Kim, S., Kang, B. S., Ren, F., Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J. Electrochemical Society

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