MAGNETIC RESONANCE OF OXYGEN-RELATED DEFECTS IN SILICON

MAGNETIC RESONANCE OF OXYGEN-RELATED DEFECTS IN SILICON

著者名:

掲載資料名:

Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

59

発行年:

1986

開始ページ:

111

終了ページ:

124

総ページ数:

14

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837241 [0931837243]

言語:

英語

請求記号:

M23500/59

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015545
シリーズID:	PA00000011
会議名:	Symposium on oxygen, carbon, hydrogen, and nitrogen in crystalline silicon
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.05

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