DEFECTS IN GaAs GROWN ON Ge SUBSTRATES

DEFECTS IN GaAs GROWN ON Ge SUBSTRATES

著者名:

Carter, C.B.

掲載資料名:

Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

56

発行年:

1985

開始ページ:

73

終了ページ:

78

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837210 [0931837219]

言語:

英語

請求記号:

M23500/56

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015542
シリーズID:	PA00000011
会議名:	Symposium on layered structures and epitaxy
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.04

類似資料:

1 国際会議録 THE STUDY OF INTERFACES IN GaAs Cho, N.-H., Rasmussen, D.R., McKernan, S., Carter, C.B., Wagner, D.K. Materials Research Society	7 国際会議録 THE CORE STRUCTURE OF DISLOCATIONS IN Ga-s DeCooman, B.C., Kuesters, K.-H., Carter, C.B. Materials Research Society
2 国際会議録 INTERFACE DEFECTS IN GaAs AND GaAs-AlXGa1-XAs GROWN ON Ge Cho, N. -H., McKernan, S., Wagner, D. K., Carter, C. B. Materials Research Society	8 国際会議録 DEFECTS AND INTERFACES IN GaAs GROWN ON Si McKernan, S., Zhu, J.G., Carter, C.B., Caridi, E., Schaff, W. Materials Research Society
3 国際会議録 Growth and characterization of epitaxial GaAs on Ge/Si substrates Fletcher, R. M., Ken Wagner, D., Ballantyne, J. M. North-Holland	9 国際会議録 THE STRUCTURE OF SURFACE STEPS ON LOW-INDEX PLANES OF OXIDES Susnitkzky, D.W., Simpson,Kouh Y., DeCooman, B.C., Carter, C.B. Materials Research Society
4 国際会議録 THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGal-xAs/GaAs SUPERLATTICES DeCooman, B.C., Carter, C.B., Ralston, J., Wicks, G.W., Eastman, L.F. Materials Research Society	10 国際会議録 EFFECT OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL STRAIN AND DEFECT DISTRIBUTION OF MOCVD GROWN GaAs ON SI Hsieh, K.C., Feng, M.S., Stillman, G.E., Ito, C.R., McIntyre, D.G., Kaliski, R.W., Feng, M. Materials Research Society
5 国際会議録 CHARACTERIZATION OF DISLOCATIONS IN GaAs GROWN ON Si AND Ge Cho, N.-H., McKernan, s., Carter, C. B., De Cooman, B. C., Wagner, K. Materials Research Society	11 国際会議録 CHARACTERIZATION OFAPBs IN GaAs AND GROWN ON Si AND Ge Carter, C. B., Cho, N. -H., McKernan, s. Materials Research Society
6 国際会議録 INTERMIXING OF ION-IMPLANTED A1GaAs/GaAs SUPERLATTICES Ralston, J., Wicks, G.W., Eastman, L.F., Rathbun, L., DeCooman, B.C., Carter, C.B. Materials Research Society	12 国際会議録 High-spatial-resolution diffusion length measurements in polycrystalline GaAs Fletcher, Robert M., Wagner, D. Ken, Wicks, G.W., Ballantyne, J.M. North-Holland

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