HCl OXIDATION OF HIGH DOSE ARSENIC IMPLANTED SILICON

HCl OXIDATION OF HIGH DOSE ARSENIC IMPLANTED SILICON

著者名:

掲載資料名:

Thin films : interfaces and phenomena : symposium held December 2-6, 1985, Boston, Massachusetts, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

54

発行年:

1985

開始ページ:

567

終了ページ:

572

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837197 [0931837197]

言語:

英語

請求記号:

M23500/54

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015540
シリーズID:	PA00000011
会議名:	Symposium on thin films
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.06

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