EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERS FORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION

EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERS FORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION

著者名:

掲載資料名:

Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

53

発行年:

1985

開始ページ:

257

終了ページ:

262

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837180 [0931837189]

言語:

英語

請求記号:

M23500/53

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015539
シリーズID:	PA00000011
会議名:	Symposium on semiconductor-on-insulator and thin film transistor technology
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.03-1985.12.06

類似資料:

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3 国際会議録 TWINNING STRUCTURE OF (113) DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL Visitserngtrakul, S., Barry, J., Krause, S. Materials Research Society	9 国際会議録 Formation of SiC, Si3N4, and SiO2 by high-dose ion implantation and laser annealing Chiang, S.W., Liu, Y.S., Reihl, R.F. North Holland
4 国際会議録 EFFECT OF OXYGEN IMPLANTATION CONDITIONS ON BURIED SiO2 LAYER FORMATION USING A MULTIPLE STEP PROCESS Namavar, F., Cortesi, E., Pinizzotto, R.F., Yang, H. Materials Research Society	10 国際会議録 THE MICROSTRUCTURE OF SILICON-ON-INSULATOR STRUCTURES FORMED BY HIGH DOSE OXYGEN ION IMPLANTATION Pinizzotto, R. F., Vaandrager, B. L., Lam, H. W. North-Holland
5 国際会議録 HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL Visitserngtrakul, S., Jung, C. O., Cordts, B. F., Roitman, P., Krause, S. J. Materials Research Society	11 国際会議録 CHARACTERIZATION OF DEVICE GRADE SOI STRUCTURES FORMED BY IMPLANTATION OF HIGH DOSES OXYGEN Hemment, P. L. F., Maydell-Ondrusz, E. A., Stephens, K. G., Arrowsmith, R. P., Glaccum, A> C., Kilner, J. A., Butcher, … North-Holland
6 国際会議録 CHARACTERIZATION AND EVOLUTION OF MICROSTRUCTURES FORMED BY HIGH DOSE OXYGEN IMPLANTATION OF SILICON El-Ghor, M.K., Pennycook, S.J., Sjoreen, T.P., Narayan, J. Materials Research Society	12 国際会議録 FORMATION OF OXIDE LAYERS BY HIGH DOSE IMPLANTATION INTO SILICON Gill, S. S., Wilson, I. H. North-Holland

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