Blank Cover Image

* SILICON ON INSULATOR FORMED BY 0+ OR N+ ION IMPLANTATION

著者名:
Hemment, P.L.F.  
掲載資料名:
Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
53
発行年:
1985
開始ページ:
207
終了ページ:
222
総ページ数:
16
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837180 [0931837189]
言語:
英語
請求記号:
M23500/53
資料種別:
国際会議録

類似資料:

1 国際会議録 Optical diagnostics of light-emitting Si clusters in SiO2 formed by ion implantation

Valakh,M,Ya., Yukhimchuk,V.A., Bratus',V.Ya., Nasarov,A.N., Hemment,P.L.F., Komoda,T.

SPIE-The International Society for Optical Engineering
7 国際会議録 CARRIER LIFETIME DISTRIBUTIONS AND RECOMBINATION KINETICS IN SILICON ON INSULATOR (SIMOX) SUBSTRATES

Lourenco, M.A., Homewood, K.P., Hemment, P.L.F.

Materials Research Society
2 国際会議録 SILICON ON INSULATOR BY HIGH DOSE IMPLANTATION

Hemment, P. L. F.

North Holland
8 国際会議録 Nucleation of oxidation induced stacking faults (01SF) in ion implanted SIMOX structures

Giles, L.F., Nejim, A., Cristiano, F., Hemment, P.L.F.

Electrochemical Society
3 国際会議録 DOSE DEPENCE OF DEFECTS IN SILICON PRODUCED BY HIGH DOSE,HIGH TEMPERATURE 0+ IMPLANTATION.

HOBBS,A., BARKLIE,R.C., REESON,K., HEMMENT,P.L.F.

Trans Tech Publications
9 国際会議録 TEM OBSERVATIONS OF SILICON-ON-INSULATOR STRUCTURES FORMED BY NITROGEN IMPLANTATION WITH ANNEALING AT 1405°C

Meekison, C. D., Booker, G. R., Reeson, K. J., Hemment, P. L. F., Celler, G. K.

Materials Research Society
4 国際会議録 Photoluminescence of Extended Defects in Silicon-on-Insulator Formed by Implantation of Oxygen

Qian, Y. H., Evans, J. H., Giles, L. F., Nejim, A., Hemment, P. L. F.

MRS - Materials Research Society
10 国際会議録 Anomalous damage behavior of BF2+ implantation in silicon

C. Lin, Z.Y. Zhou, X.Q. Li, S. Zou, P.L.F. Hemment

Society of Photo-optical Instrumentation Engineers
5 国際会議録 Structural characterization by RBS and TEM of SiC buried layers formed by ion beam synthesis at high temperature

Nejim, A., Hemment, P.L.F., Stoemenos, J.

Electrochemical Society
11 国際会議録 Delineation of crystallographic defects in ultra thin SIMOX materials produced by low energy low dose oxygen implantation

Giles, L.F., Meyyappan, N., Nejim, A., Blake, J., Cristiano, F., Hemment, P.L.F.

Electrochemical Society
6 国際会議録 Formation and characterization of double SIMOX structures by sequential high and low energy oxygen implantation into silicon

Hatzopoulos, N., Siapkas, D.I., Hemment, P.L.F., Skorupa, W.

Electrochemical Society
12 国際会議録 The SOI odyssey

Hemment, P.L.F.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12