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RAPID THERMAL ANNEAL AND FURNACE ANNEAL OF SILICON AND BERYLLIUM IMPLANTED GALLIUM ARSENIDE

著者名:
掲載資料名:
Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
45
発行年:
1985
開始ページ:
285
終了ページ:
290
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837104 [0931837103]
言語:
英語
請求記号:
M23500/45
資料種別:
国際会議録

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