A SELF-ANNEALING TECHNIQUE FOR SIMULTANEOUS TITANIUM SILICIDE AND N+ /P JUNCTION FORMATION

A SELF-ANNEALING TECHNIQUE FOR SIMULTANEOUS TITANIUM SILICIDE AND N+ /P JUNCTION FORMATION

著者名:

Finetti, Manuela

掲載資料名:

Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

45

発行年:

1985

開始ページ:

177

終了ページ:

182

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837104 [0931837103]

言語:

英語

請求記号:

M23500/45

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015534
シリーズID:	PA00000011
会議名:	Symposium on ion beam processes in advanced electronic materials and device technology
回次:	1985
会議開催地:	San Francisco, CA, USA
会議開催年:	1985.04.15-1985.04.18

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2 国際会議録 SELF ANNEALING IMPLANTATION OF As+ IN SILICON Berti, M., Drigon, A.V., Lotti, R., Lulli, G., Merli, P.G. Materials Research Society	8 国際会議録 SILICON CONSUMPTION DURING SELF-ALIGNED TITANIUM SILICIDE FORMATION ON SHALLOW JUNCTIONS Smith, P.L., Osburn, C.M., Wen, D.S., McGuire, G. Materials Research Society
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