SIMS , SAM AND RBS STUDY OF HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON

SIMS , SAM AND RBS STUDY OF HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON

著者名:

掲載資料名:

Applied materials characterization : symposium held April 15-18, 1985, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

48

発行年:

1985

開始ページ:

263

終了ページ:

272

総ページ数:

10

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837135 [0931837138]

言語:

英語

請求記号:

M23500/48

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015531
シリーズID:	PA00000011
会議名:	Symposium on applied materials characterization
回次:	1985
会議開催地:	San Francisco, CA, USA
会議開催年:	1985.04.15-1985.04.18

類似資料:

1 国際会議録 MICROSTRUCTURAL CHARACTERIZATION OF HIGH DOSE OXYGEN IMPLANTED SILICON Batstone, J.L., White, Alice E., Short, K..T., Gibson, J.M., Jacobson, D.C. Materials Research Society	7 国際会議録 THE EFFECTS OF HIGH AND LOW DOSE HYDROGEN ION IMPLANTATIONS ON Al/n-Si SCHOTTKY DIODES Yapsir, A. S., Hadizad, P., Lu, T. -M., Corelli, J. C., Corbett, J. W., Lanford, W. A., Bakhru, H. Materials Research Society
2 国際会議録 ANALYSIS OF HIGH-DOSE IMPLANTED SILICON BY HIGH-DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM Lohner, T., Mezey, G., Fried, M., Ghita, L., Ghita, C., Mertens, A., Kerkow, H., Kotai, E., Paszti, F., Banyai, F., … Materials Research Society	8 国際会議録 IMPROVED SOI FILMS BY HIGH DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING Celler, G.K., Hemment, P.L.F., West, K.W., Gibson, J.M. Materials Research Society
3 国際会議録 CHARACTERIZATION AND EVOLUTION OF MICROSTRUCTURES FORMED BY HIGH DOSE OXYGEN IMPLANTATION OF SILICON El-Ghor, M.K., Pennycook, S.J., Sjoreen, T.P., Narayan, J. Materials Research Society	9 国際会議録 DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL Lee, J. D., Park, J. C., Venables, D., Krause, S. J., Roitman, P. MRS - Materials Research Society
4 国際会議録 Computer simulation and RBS/C studies of high-dose N+ and Al- co-implantation in 6H-SiC Kharlamov,V.S., Kulikov,D.V., Trushin,Yu.V., Tsigankov,D.N., Yankov,R.A., Voelskow,M., Skorupa,W., Pezoldt,J. SPIE-The International Society for Optical Engineering	10 国際会議録 HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON Srikanth, K., Chu, M., Ashok, S., Nguyen, N., Vedam, K. Materials Research Society
5 国際会議録 A COMPARISON OF ELLIPSOMETER AND RBS ANALYSIS OF IMPLANT DAMAGE IN SILICON Paulson, W. M., Wilson, S. R., White, C. W., Appleton, B. R. North-Holland	11 国際会議録 TDS and RBS Studies of Ar Implanted to Si Hanada,R., Saito,S., Nagata,S., Yamaguchi,S., Shinozuka,T., Fujioka,M. Trans Tech Publications
6 国際会議録 HCl OXIDATION OF HIGH DOSE ARSENIC IMPLANTED SILICON Choi, Seong Soo, Numan, M.Z., Finstad, T.G., Chu, W.K., Fathy, D. Materials Research Society	12 国際会議録 HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL Visitserngtrakul, S., Jung, C. O., Cordts, B. F., Roitman, P., Krause, S. J. Materials Research Society

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