EPITAXIAL GROWTH OF REFRACTORY SILICIDES ON SILICON

EPITAXIAL GROWTH OF REFRACTORY SILICIDES ON SILICON

著者名:

掲載資料名:

Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

37

発行年:

1985

開始ページ:

375

終了ページ:

380

総ページ数:

6

出版情報:

Pittsburgh: Materials Research Society

ISSN:

02729172

ISBN:

9780931837029 [0931837022]

言語:

英語

請求記号:

M23500/37

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015523
シリーズID:	PA00000011
会議名:	Symposium on layered structures, epitaxy, and interfaces
回次:	1984
会議開催地:	Boston, MA, USA
会議開催年:	1984.11.27-1984.11.30

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2 国際会議録 RECENTDEVELOPMENTS IN THE EPITAXIAL GROWTH OF TRANSITION METAL SILICIDES ON SILICON Chen J. L., Chu J. J., Lur W., Hsu F. H., Lee C T. Kluwer Academic Publishers	8 国際会議録 Epitaxial growth of NiSi2 on (O11)Si Chen, L. J., Lin, W. T., Chang, M. B. North-Holland
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