SILICON REDISTRIBUTION IN MBE-GROWN GaAs AND AlGaAs DURING RAPID THERMAL PROCESSING
- 著者名:
Tatsuta, S. Inata, T. Okamura, S. Muto, S. Hiyamizu, S. Umebo, I. - 掲載資料名:
- Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 37
- 発行年:
- 1985
- 開始ページ:
- 23
- 終了ページ:
- 26
- 総ページ数:
- 4
- 出版情報:
- Pittsburgh: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837029 [0931837022]
- 言語:
- 英語
- 請求記号:
- M23500/37
- 資料種別:
- 国際会議録
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4
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Generation of EL2-Level upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
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