EBIC EVIDENCE FOR CARBON-BASED GETTERING IN EFG SILICON

EBIC EVIDENCE FOR CARBON-BASED GETTERING IN EFG SILICON

著者名:

掲載資料名:

Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

36

発行年:

1985

開始ページ:

181

終了ページ:

186

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837012 [0931837014]

言語:

英語

請求記号:

M23500/36

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015522
シリーズID:	PA00000011
会議名:	Symposium on impurity diffusion and gettering in silicon
回次:	1984
会議開催地:	Boston, MA, USA
会議開催年:	1984.11.26-1984.11.30

類似資料:

1 国際会議録 CARBON PRECIPITATION IN CZ AND EFG SILICON Feng, S.Q., Kalejs, J.P., Ast, D.G. Materials Research Society	7 国際会議録 *GETTERING AND GETTERING STABILITY OF METALS AT OXIDE PARTICLES IN SILICON Falster, R., Laczik, Z., Booker, G. R, Bhatti, A. R., Tork, P. Materials Research Society
2 国際会議録 TEM/EBIC Investigations of Structural Defects in Polycrystalline Solar Cells Ast, D. G., Cunningham, B., Gleichmann, R. North-Holland	8 国際会議録 IMPURITY GETTERING BY IMPLANTED CARBON IN SILICON Wong, H., Cheung, N.. W., Yu, K. M., Chu, P. K., Liu, J. Materials Research Society
3 国際会議録 EBIC investigation of hydrogen passivated structural defects in EFG silicon ribbon Sullivan, T.D., Ast, D.G. North Holland	9 国際会議録 FABRICATION AND PROPERTIES OF SINGLE, DOUBLE, AND TRIPLE GATE POLYCRYSTALLINE-SILICON THIN FILM TRANSISTORS Proano, R. E., Soave, R. J., Ast, D. G. Materials Research Society
4 国際会議録 EBIC/TEM investigation of defects in solar cell silicon Ast, Dieter G., Cunningham, Brian, Strunk, Horst North-Holland	10 国際会議録 Oxygen and carbon precipitation in crystalline sheet silicon: Depth profiling by infrared spectroscopy, EBIC, and preferential etching Lu, J., Rozgonyi, G., Rand, J., Jonczyk, R. Electrochemical Society
5 国際会議録 Precipitation of copper in transmutation doped silicon Gleichmann, R. North-Holland	11 国際会議録 Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC Yan, F., Devaty, R.P., Choyke, W.J., Gali, A., Bhat, I.B., Larkin, D.J. Trans Tech Publications
6 国際会議録 EBIC ANALYSIS OF GETTERING AT Si-Si(Ge) HETEROEPITAXIAL MISFIT DISLOCATIONS AS A FUNCTION OF IMPURITY DECORATION Kirk, H. R., Radzimaski, Z. J., Fitzgerald, E. A, Rozgonyi, G. A. Materials Research Society	12 国際会議録 Point Defects, Diffusion, and Gettering in Silicon Gosele, U., Conrad, D., Werner, P., Tong, Q-Y., Gafiteanu, R., Tan, T. Y. MRS - Materials Research Society

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