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ENHANCED CARBON DIFFUSION IN SILICON DURING 900 C ANNEALING

著者名:
掲載資料名:
Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
36
発行年:
1985
開始ページ:
89
終了ページ:
94
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837012 [0931837014]
言語:
英語
請求記号:
M23500/36
資料種別:
国際会議録

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