Blank Cover Image

POLYSILICON GRAIN GROWTH BY RAPID ISOTHERMAL ANNEALING

著者名:
掲載資料名:
Comparison of thin film transistor and SOI technologies : symposium held February 1984 in Albuquerque, New Mexico, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
33
発行年:
1984
開始ページ:
169
終了ページ:
178
総ページ数:
10
出版情報:
New York: North Holland
ISSN:
02729172
ISBN:
9780444008992 [0444008993]
言語:
英語
請求記号:
M23500/33
資料種別:
国際会議録

類似資料:

1 国際会議録 N-CHANNEL AND P-CHANNEL LPCVD POLYSILICON MOSFET’S AND EFFECTS OF GRAIN BOUNDARY PASSIVATION

Shichijo, H., Malhi, S. D. S., Chatterjee, P. K., Shah, A. H., Pollack, G. P., Richardson, W. H., Shah, R. R., Douglas, …

North Holland
7 国際会議録 RAPID ANNEALING IN Si

Siedel, T. E., Pai, C> S., Lischner, D. J., Maher, D. M., Knoell,, Williams, J. S., Penumalli, B. R., Jacobson, D. C.

Materials Research Society
2 国際会議録 SECONDARY GRAIN GROWTH DURING RAPID THERMAL ANNEALING OF DOPED POLYSILICON FILMS

Cammarata, R. C., Thompson, C. V., Garrison, S. M.

Materials Research Society
8 国際会議録 DOPANT ENHANCED GRAIN GROWTH DURING CRYSTALLIZATION OF AMORPHOUS SILICON USING RAPID THERMAL ANNEALING

Kakkad, R., Fonash, S. J., Howell, P. R.

Materials Research Society
3 国際会議録 * PROCESS AND DEVICE CONSIDERATIONS FOR SMALL GRAIN POLYSILICON TRANSISTORS

Shichijo, H., Malhi, S.D.S., Sundaresan, R., Banerjee, S.K., Lam, H.W.

Materials Research Society
9 国際会議録 LARGE-GRAIN POLYSILICON FILMS DEPOSITED BY RAPID THERMAL LPCVD

Mitchell, S. J. N., McNeil, D. W., Raza, S. H., Armstrong, B. M., Gamble, H. S.

Materials Research Society
4 国際会議録 COMPARISON OF STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF SOLID-PHASE EPITANIAL FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING

Sundaresan, R., Chang, P.-H., Malhi, S.D.S., Lam, H.W.

Materials Research Society
10 国際会議録 ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON WITH A GRAPHITE RADIATION SOUCE

Wilson, S. R., Gregory, R. B., Paulson, W. M., Handi, A. H., McDaniel, F. D.

North-Holland
5 国際会議録 SECONDARY GRAIN GROWTH IN HEAVILY DOPED POLYSILICON DURING RAPID THERMAL ANNEALING

Batra, S., Park, K., Lobo, M., Banerjee, S.

Materials Research Society
11 国際会議録 CONTROL OF POLYSILICON EMITTER BIPOLAR TRANSISTOR CHARACTERISTICS BY RAPID THERMAL OR FURNACE ANNEAL OF THE POLYSILICON/SILICON INTERFACE

Bhattacharya, S., Lobo, M., Jung, L., Banerjee, S., Reuss, R., Batra, S., Park, K., Hu, G.

Materials Research Society
6 国際会議録 Characterization of thermal oxides of laser annealing polysilicon

Shah, Rajiv R., Mays, Robert, Jr., Crosthwait, D. Lloyd

North Holland
12 国際会議録 The effect of annealing temperature on the morphology of stacking faults in czochralski silicon

Pinizzotto, R.F., Schaake, H.F.

North Holland
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12