DIELECTRIC ISOLATION USING POROUS SILICON

DIELECTRIC ISOLATION USING POROUS SILICON

著者名:

掲載資料名:

Comparison of thin film transistor and SOI technologies : symposium held February 1984 in Albuquerque, New Mexico, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

33

発行年:

1984

開始ページ:

63

終了ページ:

70

総ページ数:

8

出版情報:

New York: North Holland

ISSN:

02729172

ISBN:

9780444008992 [0444008993]

言語:

英語

請求記号:

M23500/33

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015519
シリーズID:	PA00000011
会議名:	Comparison of thin film transistor and SOI technologies
回次:	1984
会議開催地:	Albuquerque, New Mexico, U.S.A.
会議開催年:	1984.02.00

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