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Dopant. Site Location by Electron Channeling in Ion Implabted Silicon

著者名:
掲載資料名:
Electron microscopy of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
31
発行年:
1984
開始ページ:
97
終了ページ:
104
総ページ数:
8
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008978 [0444008977]
言語:
英語
請求記号:
M23500/31
資料種別:
国際会議録

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