CARRIER LIFETIME REDUCTION BY ION IMPLANTATION INTO SILICON
- 著者名:
- 掲載資料名:
- Ion implantation and ion beam processing of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 27
- 発行年:
- 1984
- 開始ページ:
- 537
- 終了ページ:
- 542
- 総ページ数:
- 6
- 出版情報:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444008695 [0444008691]
- 言語:
- 英語
- 請求記号:
- M23500/27
- 資料種別:
- 国際会議録
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6
国際会議録
Study of Lifetime of Minority Carriers in Phosphorous and Boron Ion Implanted n-Type Silicon
SPIE-The International Society for Optical Engineering, Narosa |
12
国際会議録
Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Materials Research Society |