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THE PRODUCTION OF POROUS STRUCTURES ON Si, Ge AND GaAs BY HIGH DOSE ION IMPLANTATION

著者名:
Williams, J. S.
Chivers, D. J.
Elliman, R. G.
Johnson, S. T.
Lawson, E. M.
Mitchell, I. V.
Orrman-Rossiter, K. G.
Pogany, A> P.
Short, K. T.
さらに 4 件
掲載資料名:
Ion implantation and ion beam processing of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
27
発行年:
1984
開始ページ:
205
終了ページ:
210
総ページ数:
6
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008695 [0444008691]
言語:
英語
請求記号:
M23500/27
資料種別:
国際会議録

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9 国際会議録 ION BEAM PROCESSING OF GaAs AT ELEVATED TEMPERATURES

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10 国際会議録 ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs

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