*ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING

*ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING

著者名:

Pensl, G.

掲載資料名:

Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

23

発行年:

1984

開始ページ:

347

終了ページ:

358

総ページ数:

12

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444009036 [0444009035]

言語:

英語

請求記号:

M23500/23

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015507
シリーズID:	PA00000011
会議名:	Symposium on energy beam-solid interactions and transient thermal processing
回次:	1983
会議開催地:	Boston, MA, USA
会議開催年:	1983.11.14-1983.11.17

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