INSTABILITY AT THE MELTING THRESHOLO OF LASER IRRADIATED SILICON AS THE UNDERLYING ORIGIN OF THE RIPPLES FORMATION

INSTABILITY AT THE MELTING THRESHOLO OF LASER IRRADIATED SILICON AS THE UNDERLYING ORIGIN OF THE RIPPLES FORMATION

著者名:

掲載資料名:

Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

23

発行年:

1984

開始ページ:

199

終了ページ:

202

総ページ数:

4

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444009036 [0444009035]

言語:

英語

請求記号:

M23500/23

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015507
シリーズID:	PA00000011
会議名:	Symposium on energy beam-solid interactions and transient thermal processing
回次:	1983
会議開催地:	Boston, MA, USA
会議開催年:	1983.11.14-1983.11.17

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