Ion implantation technique for simultaneous formation of a shallow silicon p-n juction and a shallow silicide-silicon ohmic contact

Ion implantation technique for simultaneous formation of a shallow silicon p-n juction and a shallow silicide-silicon ohmic contact

著者名:

掲載資料名:

Interfaces and contacts : symposium held November 1982 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

18

発行年:

1983

開始ページ:

385

終了ページ:

392

総ページ数:

8

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008206 [0444008209]

言語:

英語

請求記号:

M23500/18

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015501
シリーズID:	PA00000011
会議名:	Symposium on interfaces and contacts
回次:	1982
会議開催地:	Boston, MA, USA
会議開催年:	1982.11.01-1982.11.04

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