THE GROWTH OF EPITAXIAL NiSi2 SINGLE CRYSTALS ON SILICON BY THE USE OF TEMPLATE LAYERS
- 著者名:
- Teng, R. T.
- Gibson, J. M.
- Poate, J. M. ( Bell Laboratories, Murray Hill, NJ )
- 掲載資料名:
- Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 14
- 発行年:
- 1983
- 開始ページ:
- 435
- 終了ページ:
- 440
- 総ページ数:
- 6
- 出版情報:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444008121 [0444008128]
- 言語:
- 英語
- 請求記号:
- M23500/14
- 資料種別:
- 国際会議録
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