OXYGEN PRECIPITATION EFFECTS IN DEGENERATELY-DOPED SILICON

OXYGEN PRECIPITATION EFFECTS IN DEGENERATELY-DOPED SILICON

著者名:

Rozgonyi, G. A. ( NC State Univ. Raleigh, NC: )
Pearce, C.W. ( Westerns Electric, Allentown, PA; )
Jacoodine, R. J. ( Lehigh University, Bethlehem, PA )

掲載資料名:

Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

14

発行年:

1983

開始ページ:

181

終了ページ:

186

総ページ数:

6

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008121 [0444008128]

言語:

英語

請求記号:

M23500/14

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015498
シリーズID:	PA00000011
会議名:	Symposium on defects in semiconductors
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1982.11.00

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2 国際会議録 Oxygen and carbon precipitation in crystalline sheet silicon: Depth profiling by infrared spectroscopy, EBIC, and preferential etching Lu, J., Rozgonyi, G., Rand, J., Jonczyk, R. Electrochemical Society	8 国際会議録 OXYGEN PRECIPITATION IN SILICON: NUMERICAL MODELS Lavine, J.P., Hawkins, G.A., Anagnostopoulos C.N., Rivaud L. Materials Research Society
3 国際会議録 EFFECT OF HEAVY DOPING ON THE NUCLEATION AND GROWTH OF BULK STACKING FAULTS IN SILICON Pearce, C. W., Kook, T., Jaccodine, R. J. Materials Research Society	9 国際会議録 OXYGEN PRECIPITATION IN n+ SILICON Dyson, W., Makovsky J. Materials Research Society
4 国際会議録 Effect of Oxygen and Nitrogen Doping on Mechanical Properties of Silicon Using Nanoindentation Karoui, A., Rozgonyi, G., Ciszek, T. Materials Research Society	10 国際会議録 ASPECTS OF THE ETCHING OF SILICON DIOXIDE IN FLUORIDE-BEARING SOLUTIONS Pearce, C.W., Chung, B.C. Electrochemical Society
5 国際会議録 Charge-State Defect Engineering of Silicon During Ion Implantation Brown, R. A., Ravi, J., Erokhin, Y., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	11 国際会議録 OXYGEN PRECIPITATION IN SILICON - ITS EFFECTS ON MINORITY CARRIER RECOMBINATION AND GENERATION LIFETIME Varker, C. J., Whitfield, J. C., Fejes, P. L. North-Holland
6 国際会議録 Charge State Defect Engineering of Silicon During Ion Implantation Brown, R. A., Ravi, J., Erokhin, Y., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	12 国際会議録 Dopant Diffusion and Point Defects ni Silicon During Silicidation Honeycutt W. J., Rozgonyi A. G. Kluwer Academic Publishers

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