*PRECIPITATION OF OXYGEN AND THE MECHANISH OF STACKING FAULT FORMATION IN CZOCHRALSKI SILICON BULK CRYSTALS,

*PRECIPITATION OF OXYGEN AND THE MECHANISH OF STACKING FAULT FORMATION IN CZOCHRALSKI SILICON BULK CRYSTALS,

著者名:

Wada, K.
Inoue, N.
Osaka, J. ( Nippon Telegraph and Telephone Public Corporation, Musashino-Shi, Tokyo, Japan )

掲載資料名:

Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

14

発行年:

1983

開始ページ:

125

終了ページ:

140

総ページ数:

16

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008121 [0444008128]

言語:

英語

請求記号:

M23500/14

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015498
シリーズID:	PA00000011
会議名:	Symposium on defects in semiconductors
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1982.11.00

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