THE EFFECTS OF SELECTIVELY ABSORBING DIELECTRIC LAYERS AND BEAM SHAPING ON RECRYSTALLIZATION AND FET CHARACTERISTICS IN LASER RECRYSTALLIZED SILICON ON AMORPHOUS SUBSTRATES

THE EFFECTS OF SELECTIVELY ABSORBING DIELECTRIC LAYERS AND BEAM SHAPING ON RECRYSTALLIZATION AND FET CHARACTERISTICS IN LASER RECRYSTALLIZED SILICON ON AMORPHOUS SUBSTRATES

著者名:

掲載資料名:

Laser-solid interactions and transient thermal processing of materials : symposium held November 1982 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

13

発行年:

1983

開始ページ:

549

終了ページ:

556

総ページ数:

8

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444007889 [0444007881]

言語:

英語

請求記号:

M23500/13

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015497
シリーズID:	PA00000011
会議名:	Symposium on laser-solid interactions and transient thermal processing of materials
回次:	1982
会議開催地:	Boston, MA, USA
会議開催年:	1982.11.01-1982.11.04

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