Electrical characteristics of SOI-like structures formed in nitrogen or oxygen implanted silicon treated under high pressure
- 著者名:
- 掲載資料名:
- Silicon-on-insulator technology and devices XII : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2005-03
- 発行年:
- 2005
- 開始ページ:
- 325
- 終了ページ:
- 330
- 総ページ数:
- 6
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774611 [1566774616]
- 言語:
- 英語
- 請求記号:
- E23400/200503
- 資料種別:
- 国際会議録
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SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
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Impact of hydrostatic pressure during annealing of Si:O on creation of SIMOX-like structures
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Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen
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Modification of Si/SiO2 interface in SOI structures by hydrogen implantation: radiation tolerance
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