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High-temperature behavior of fully-depleted SOI MOSFETs in case of charge instability of buried oxide

著者名:
掲載資料名:
Silicon-on-insulator technology and devices XII : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-03
発行年:
2005
開始ページ:
113
終了ページ:
118
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774611 [1566774616]
言語:
英語
請求記号:
E23400/200503
資料種別:
国際会議録

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