Meta-stable dip (MSD) effect in fully-depleted SOI CMOSFETs

Meta-stable dip (MSD) effect in fully-depleted SOI CMOSFETs

著者名:

Bawedin, M.

掲載資料名:

Silicon-on-insulator technology and devices XII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-03

発行年:

2005

開始ページ:

51

終了ページ:

56

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774611 [1566774616]

言語:

英語

請求記号:

E23400/200503

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015411
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	12th ; 207th
会議開催地:	Quebec City, Canada
会議開催年:	2005.05.15-2005.05.20

類似資料:

1 国際会議録 Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETs Houk, Y., Nazarov, A. N., Turchanikov, V. I., Lysenko, V. S., Adriaensen, S., Flandre, D. Kluwer Academic Publishers	7 国際会議録 N. DHalleweyn, J. Benson. M. Swanenbeig, W. Redman-Whizc A New Fully-Depleted SOI MOSFET Macro-Model Valid from DC to RF Raskin, B. Inilguez. J.P., Demeus, L., Neve, A., Goffioul, M., Simon, P., Vanhoenacker, D., Flandre, D. Electrochemical Society
2 国際会議録 Nature of high-temperature charge instability of fully depleted SOI MOSFETs Nazarov, A.N., Lysenko, V.S., Colinge, J.P., Flandre, D. Electrochemical Society	8 国際会議録 Measurement of generation lifetime in partially depleted SOI MOSFETs Shin, H C, Racanelli, M, Huang, W M, Ford, J, Foersiner, J, Shin, H, Wetteroth, T, Hong, S Q, Wilson, S R, Schroder, D … Electrochemical Society
3 国際会議録 Architectures comparison for ultra-thin fully-depleted submicron SOI MOSFErs Faynot, O., Giffard, B., Raynaud, C., Gautier, J. Electrochemical Society	9 国際会議録 High-temperature behavior of fully-depleted SOI MOSFETs in case of charge instability of buried oxide Nazarov, A.N., Houk, Y., Vovk, Ya.N., Lysenko, V.S., Flandre, D. Electrochemical Society
4 国際会議録 Performance of Double-Gate SOI nMOSFETs at Low Temperature Vandooren, A., Cristoloveanu, S., Colinge, J.P., Flandre, D. Electrochemical Society	10 国際会議録 Cryogenic Operation of Fully-Depleted SOI nFETs Li, Y., Cressler, J.D., Niu, G., Patel, J. Electrochemical Society
5 国際会議録 Characterization of a fully depleted CCD on high-resistivity silicon Stover,R.J., Wei,M., Lee,Y., Gilmore,D.K., Holland,S.E., Groom,D.E., Moses,W.W., Perlmutter,S., Goldhaber,G., … SPIE-The International Society for Optical Engineering	11 国際会議録 High-voltage-compatable fully depleted CCDs [6276-12] Holland, S. E., Bebek, C. J., Dawson, K. S., Ernes, J. H., Fabricius, M. H., fairfield, J. A., Groom, D. E., Karcher, … SPIE - The International Society of Optical Engineering
6 国際会議録 From SOI 1T-DRAMs to Unified Memory Concepts Sorin Cristoloveanu, Maryline Bawedin Materials Research Society	12 国際会議録 Fully depleted back-illuminated p-channel CCD development Bebek, C.J., Bercovitz, J.H., Groom, D.E., Holland, S.E., Kadel, R.W., Karcher, A., Kolbe, W.F., Oluseyi, H.M., Palaio, … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12