Subthreshold quantum-mechanical effects in undoped double-gate MOSFETs

Subthreshold quantum-mechanical effects in undoped double-gate MOSFETs

著者名:

掲載資料名:

Silicon-on-insulator technology and devices XII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-03

発行年:

2005

開始ページ:

21

終了ページ:

26

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774611 [1566774616]

言語:

英語

請求記号:

E23400/200503

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015411
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	12th ; 207th
会議開催地:	Quebec City, Canada
会議開催年:	2005.05.15-2005.05.20

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