Preparation and Characterization of ZnO Film on Si(111) Substrate with SiC Buffer Layer Deposited by MOCVD

Preparation and Characterization of ZnO Film on Si(111) Substrate with SiC Buffer Layer Deposited by MOCVD

著者名:

掲載資料名:

State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-04

発行年:

2005

開始ページ:

443

終了ページ:

448

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774628 [1566774624]

言語:

英語

請求記号:

E23400/200504

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015409
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Compound-Semiconductor/Solution Interface ; Meeting of the Electrochemical Society
回次:	42nd ; 2005 ; 207th
会議開催地:	Quebec City, Canada
会議開催年:	2005.05.15-2005.05.20

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