Sub Micron InP Double Heterojunction Bipolar Transistor with greater than 400 GHz Ft and Fmax
- 著者名:
Chang, P.C. Sawdai, D. Gambin, V. Zeng, X. Li, D. Yamamoto, J. Loi, K. Leslie, G. Wang, J. Elmadjian, R. Nam, P. Grossman, C. Barsky, M. Gutierrez-Aiiken, A. Oki, A. - 掲載資料名:
- State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2005-04
- 発行年:
- 2005
- 開始ページ:
- 330
- 終了ページ:
- 337
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774628 [1566774624]
- 言語:
- 英語
- 請求記号:
- E23400/200504
- 資料種別:
- 国際会議録
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9
国際会議録
Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor
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