Blank Cover Image

Low-Temperature Microwave Plasma Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma Invited Paper

著者名:
Azuma, K.  
掲載資料名:
Thin Film Transistor Technologies (TFTT VII) : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-15
発行年:
2005
開始ページ:
63
終了ページ:
73
総ページ数:
11
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774581 [1566774586]
言語:
英語
請求記号:
E23400/200415
資料種別:
国際会議録

類似資料:

1 国際会議録 Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma

Azuma, K., Goto, M., Okamoto, T., Nakata, Y.

Electrochemical Society
7 国際会議録 High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

Shin, Moon Young, Han, Sang-Myeon, Lee, Min-Cheol, Shin, Hee-Sun, Han, Min-Koo, Kwon, Jang-Yeon, Noguchi, Takashi

Materials Research Society
2 国際会議録 Low-Temperature-Proceeded Gate Insulator for Poly-Si TFTs by Combination of Photo-Oxidation and PECVD

Nakata, Y., Okamoto, T., Goto, M., Azuma, K.

Electrochemical Society
8 国際会議録 Low-Temperature Deposition of Poly-Si and SiGe Thin Films at 450oC and Fabrication of High Mobility TFTs Over 50 CM2/VS Invited Paper

Hanna, J.-i., Zhang, J.J., Lee, J.-W., Shimizu, K.

Electrochemical Society
3 国際会議録 High-Quality Low-Temperature Gate Oxide for Poly-Si TFTs*

Okumura, F., Yuda, K.

Electrochemical Society
9 国際会議録 Controlling the Amount of Si-OH Bonds for the Formation of High-Quality Low-Temperature Gate Oxides for Poly-Si TFTs

Yuda, Katsuhisa, Tanabe, Hiroshi, Sera, Kenji, Okumura, Fujio

MRS - Materials Research Society
4 国際会議録 HIGH QUALITY GATE-OXIDE FILMS FOR LOW-TEMPERATURE FABRICATED POLY-Si TFTS

Suyama, Shiro, Okamoto, Akio, Shirai,m Seiiti, Serika, Tadashi

Materials Research Society
10 国際会議録 High Quality TEOS Silicon Oxide Deposited at Low Temperature for TFT Gate Dielectric Application

Morimoto, N.I., Viana, C.E., da Silva, A.N.R.

Electrochemical Society
5 国際会議録 Low-Temperature Formation of Gate-Grade Silicon Oxide Films Using High-Density Krypton Plasma

Saito, Y., Sekine, K., Hirayama, M., Ohmi, T.

Electrochemical Society
11 国際会議録 Improvement of Gate Oxide Integrity in Low Temperature Poly Silicon TFT

Lee, Seok-Woo, Nam, Dae Hyun, Yoon, Jin Mo, Seo, Hyun Sik, Lim, Kyoung Moon, Kim, Chang-Dong

Materials Research Society
6 国際会議録 High Quality Thin Gate Dielectric Using ECR N2O-Plasma for Future Poly-Si TFT Applications

Lee, J.W., Lee, N.I., Han, C.H.

Electrochemical Society
12 国際会議録 Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N2O plasma

Howell,R.S., Kaluri,S.R., Hatalis,M.K., Hess,D.W.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12