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(8.6) 5:55 - 6:15 PM Strained-Silcon / Silicbn- Germanium-on-Insulator for High Peformance CMOS - A Manufacturable Process for 300 MM Substrates

著者名:
Reznicek, A.
Bedell, S. W.
Hovel, H. J.
Fogel, K. E.
Ott, J. A.
Mitchell, R. M.
Sadana, D. K. (IBM)
さらに 2 件
掲載資料名:
SiGe: materials, processing, and devices : proceedings of the First international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-07
発行年:
2004
開始ページ:
607
終了ページ:
618
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
言語:
英語
請求記号:
E23400/200407
資料種別:
国際会議録

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