Blank Cover Image

(8.2) 4:35 - 4:55 PM - A Hydrogen Pre-bake Process for Si Epitaxy on SiGe Surface

著者名:
Chen, H.
Bedell, S. W.
Murphy, R. J.
Mocuta, D. M.
Turansky, A. R
Domenicucci, A. G.
Sadana, D. K. (IBM)
さらに 2 件
掲載資料名:
SiGe: materials, processing, and devices : proceedings of the First international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-07
発行年:
2004
開始ページ:
569
終了ページ:
580
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
言語:
英語
請求記号:
E23400/200407
資料種別:
国際会議録

類似資料:

1 国際会議録 (8.6) 5:55 - 6:15 PM Strained-Silcon / Silicbn- Germanium-on-Insulator for High Peformance CMOS - A Manufacturable Process for 300 MM Substrates

Reznicek, A., Bedell, S. W., Hovel, H. J., Fogel, K. E., Ott, J. A., Mitchell, R. M., Sadana, D. K. (IBM)

Electrochemical Society
7 国際会議録 Improved Process Window Using Low-Carbon GexSi1-x-yCy Epitaxial Layers

Mocuta, A., Greve, D. W., Strong, R. M.

MRS - Materials Research Society
2 国際会議録 A Survey of Defects in Strained Si Layers

Bedell, S.W., Chen, H., Sadana, D.K., Fogel, K., Domenicucci, A.

Materials Research Society
8 国際会議録 (8.4) 5:15 - 5:35 PM - A Novel, High Quality SiGe Graded Buffer Growth Process Using GeCl4

Westhoff, R., Carlin, J., Erdtmann, M., Langdo, T., Leitz, C., Y., V., Petrocelli, K., Bulsara, M., Fitzgerald, E.A., …

Electrochemical Society
3 国際会議録 Characterization of ultra thin SOI and SSOI substrates: defect and strain analysis Invited

Bedell, S.W., Hovel, H., Domenicucci, A., Fogel, K., Reznicek, A., Sadana, D.K.

Electrochemical Society
9 国際会議録 (10.4) 2:35 -2:55 PM - SiGe-based Combined MBE and CVD Processing for Vertical "Silicon-on-Nothing" (SON) Device Technology

Schulze, J., Eisele, I., Thompson, P.E., Jernigan, G., Bassim, N., Suligoj, T. (University of the German Federal Armed …

Electrochemical Society
4 国際会議録 (8.3) 4:55 - 5: 15 PM - Low Temperature SiGe Process for Defect-Free Epitaxy and Smooth Morphology

Yao, L. G., Lee, K. C., Chen, S. C., Liang, M. S. (TSMC)

Electrochemical Society
10 国際会議録 Strain Engineering for Si CMOS Technology (Invited paper)

Sadana, D. K., Bedell, S. W., Reznicek, A., de Souza, J.P., Fogel, K., Hovel, H.

Electrochemical Society
5 国際会議録 (8.5) 5:35 - 5:55 PM - Investigation of Facet Formation in RTCVD Si/SiGe Selective Epitaxy

Talbot, A., Arcamone, J., Fellous, C., Deleglise,　F., Dutartre, D. (STMicroelectronics)

Electrochemical Society
11 国際会議録 Substrate Engineering for Germanium-Based CMOS Technology

S.W. Bedell, K. Fogel, A. Reznicek, J. Ott, D. Sadana

Electrochemical Society
6 国際会議録 Advanced Applications of Semiconductor Epitaxy for Cutting Edge Integrated Circuit Technolgy

D. Sadana, M. Yang, S.W. Bedell, A. Reznicek, J.P. de Souza

Electrochemical Society
12 国際会議録 (12.6) 8:35 - 8:55 PM- Advanced Epitaxy by RTCVD

Dutartre, D., Talbot, A., Fellous, C., Deleglise, F., Rubaldo, L., Chevalier, P., Chantre, A. (ST Microelectronics)

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12