(6.4) 11:55 - 12:15 PM - Ge Diffusion Effect on Low Frequency Noise in Ultra-thin Strained-SOI CMOS

(6.4) 11:55 - 12:15 PM - Ge Diffusion Effect on Low Frequency Noise in Ultra-thin Strained-SOI CMOS

著者名:

掲載資料名:

SiGe: materials, processing, and devices : proceedings of the First international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-07

発行年:

2004

開始ページ:

483

終了ページ:

492

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774208 [1566774209]

言語:

英語

請求記号:

E23400/200407

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015397
シリーズID:	PA00000028
会議名:	SiGe: Materials, Processing, and Devices Symposium ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochemical Society of Japan
回次:	1st ; 206th ; 2004
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

類似資料:

1 国際会議録 High Performance Strained-SOI CMOSFETs* Takagi, S.-I., Mizuno, T., Tezuka, T., Sugiyania, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., … Electrochemical Society	7 国際会議録 Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita Electrochemical Society
2 国際会議録 (3.1) 3:20 - 3:50 PM - Strained-Si/SiGe-on-Insulator CMOS Technology as a Platform of Device Performance Boosters (Invited) Takagi, S., Mizuno, T., Tezuka, T, Sugiyama, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	8 国際会議録 Low frequency noise in SOI transistors (Invited Paper) Tseng, T., Woo, J. C. S. SPIE - The International Society of Optical Engineering
3 国際会議録 High performance strained-SOl CMOSFETs Takagi, S-I., Mizuno, T., Tezuka, T., Sugiyama, N, Numata, T., Usuda, K., Monyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	9 国際会議録 Extremely scaled FinFETs and ultra-thin bod SOI CMOS Devices Balasubrarnanian, S., Chang, L., Choi, Y.-K., Ha, D., Lee, J., Ranade, P., Xiong, S., Bokor, J., Hu, C., King, T.-J. Electrochemical Society
4 国際会議録 SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices Tezuka, Tsutomu, Mizuno, Tomohisa, Sugiyama, Naoharu, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Numata, … Materials Research Society	10 国際会議録 (18.5) 11:35 - 11:55 AM - Ultra-Shallow Junction Formation in Strained Si/Sil-xGex using Flash-Assist RTA Kohli, P., Wise, R., Braithwaite, G., Currie, M. T., Lochtefeld, A., Rodder, M., Bennett, J., Gostowski, M., Nguyen, B., … Electrochemical Society
5 国際会議録 Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs Takagi, Shin-ichi, Tezuka, Tsutomu, Sugiyama, Naoharu, Mizuno, Tomohisa, Kurobe, Atsushi Materials Research Society	11 国際会議録 6.4 Summary Mende Stephen B, Chang Y S, Chen A B, Frey H U, Fukunishi H, Geller S P, Harris S, Heetderks H, Hsu R R, Lee L C, Su, H … Springer
6 国際会議録 An overview of low-frequency noise in advanced CMOS/SOI transistors (Invited Paper) Jomaah, J., Balestra, F. SPIE-The International Society for Optical Engineering	12 国際会議録 (8.6) 5:55 - 6:15 PM Strained-Silcon / Silicbn- Germanium-on-Insulator for High Peformance CMOS - A Manufacturable Process for 300 MM Substrates Reznicek, A., Bedell, S. W., Hovel, H. J., Fogel, K. E., Ott, J. A., Mitchell, R. M., Sadana, D. K. (IBM) Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12