(2.5) 2:45 - 3:05 PM - Enhanced 5V Complementary SiGe BiCMOS Technology by Separate NPN/PNP Emitter Formatio
- 著者名:
- 掲載資料名:
- SiGe: materials, processing, and devices : proceedings of the First international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2004-07
- 発行年:
- 2004
- 開始ページ:
- 53
- 終了ページ:
- 60
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774208 [1566774209]
- 言語:
- 英語
- 請求記号:
- E23400/200407
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society of Optical Engineering |
7
国際会議録
Comparison of 1/f noise in complementary NPN and PNP polysilicon emitter bipolar transistors
SPIE - The International Society of Optical Engineering |
Electrochemical Society | |
3
国際会議録
New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices
SPIE - The International Society for Optical Engineering |
National Aeronautics and Space Administration |
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |