Homoepitaxial Growth of Iron-Doped 4H-SiC by Bis-Trimethylsilylmethane and Ferrocene Precursors for Semi-Insulating Si
- 著者名:
Song, H. K. Jeong, J. K. Kim, S. G. Urn, M. Y. Na, H. J. Jung, S. Y. Seo, H. S. Yim, J. H. Lee, J. B. Kim, H. J. - 掲載資料名:
- State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2004-06
- 発行年:
- 2004
- 開始ページ:
- 582
- 終了ページ:
- 586
- 総ページ数:
- 5
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774192 [1566774195]
- 言語:
- 英語
- 請求記号:
- E23400/200406
- 資料種別:
- 国際会議録
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