Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics

Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics

著者名:

Fitch, R.

掲載資料名:

State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-06

発行年:

2004

開始ページ:

459

終了ページ:

464

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774192 [1566774195]

言語:

英語

請求記号:

E23400/200406

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015396
シリーズID:	PA00000028
会議名:	Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; State-of-the-Art Program on Compound Semiconductors ; Meeting of the Electrochemical Society
回次:	5th ; 41st ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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