4H-SiC Planar MESFETs With fmax of 40 GHz Without Trapping Effect
- 著者名:
Na, H.J. Jung, S.Y. Yim, J.H. Urn, M.Y. Song, H.K. Kim, H.J. - 掲載資料名:
- State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2004-06
- 発行年:
- 2004
- 開始ページ:
- 441
- 終了ページ:
- 445
- 総ページ数:
- 5
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774192 [1566774195]
- 言語:
- 英語
- 請求記号:
- E23400/200406
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
国際会議録
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |