Blank Cover Image

Study of Long Time-Scale Photoluminescence Dynamics of GaN/mGaN Quantum Wells and Comparison With Samples Grown on ELOG-GaN

著者名:
Micheletto, R.
Abiko, M.
Kaneta, A.
Narukawa, Y.
Mukai, T.
Kawakami, Y.
さらに 1 件
掲載資料名:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-06
発行年:
2004
開始ページ:
341
終了ページ:
350
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
言語:
英語
請求記号:
E23400/200406
資料種別:
国際会議録

類似資料:

1 国際会議録 Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors

Kawakami,Y., Omae,K., Kaneta,A., Okamoto,K., Izumi,T., Saijou,S., Inoue,K., Narukawa,Y., Mukai,T., Fujita,S.

SPIE-The International Society for Optical Engineering
7 国際会議録 GaN-based light-emitting diodes suitable for white light (Invited Paper)

Mukai, T., Yamada, M., Mitani, T., Narukawa, Y., Shioji, S., Niki, I., Sonobe, S., Izuno, K., Suenaga, R.

SPIE-The International Society for Optical Engineering
2 国際会議録 Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells

Y. Kawakami, A. Kaneta, M. Funato

Trans Tech Publications
8 国際会議録 Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures

Kruger, Joachim., Kisielowski, Christian, Klockenbrink, Ralf, Sudhir, G. S., Kim, Yihwan, Rubin, Michael, Weber, Eicke …

MRS - Materials Research Society
3 国際会議録 Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

Funato, Mitsuru, Nishizuka, Koji, Kawakami, Yoichi, Narukawa, Yukio, Mukai, Takashi

Materials Research Society
9 国際会議録 AlGaN/GaN multiple quantum wells grown by atomic layer deposition

M. H. Lo, Z. Y. Li, J. R. Chen, T. S. Ko, T. C. Lu

Society of Photo-optical Instrumentation Engineers
4 国際会議録 Comparison of optical properties in GaN and InGaN quantum well structures

Chichibu,S.F., Shikanai,A., Deguchi,T., Setoguchi,A., Nakai,R., Wada,K., DenBaars,S.P., Sota,T., Mukai,T., Nakamura,S.

SPIE - The International Society for Optical Engineering
10 国際会議録 Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range

U. T. Schwarz, H. Braun, K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai

SPIE - The International Society of Optical Engineering
5 国際会議録 Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Z. S. Lee, Z. C. Feng, A. G. Li, H. L. Tsai, J. R. Yang, Y. F. Chen, N. Li, I. T. Ferguson, W. Lu

SPIE - The International Society of Optical Engineering
11 国際会議録 Comparison of the optical gain of wurtzite GaN/AIGaN quantum well lasers grown on (0001)-and (1010)-oriented substrates

Chong,T.C., Yeo,Y.C., Li,M.F.

SPIE-The International Society for Optical Engineering
6 国際会議録 Recombination mechanism in low-dimensional nitride semiconductors (Invited Paper)

Kawakami, Y., Kaneta, A., Okamoto, K., Inoue, T., Satou, F., Narita, Y., Henneberger, F., Marutsuki, G., Narukawa, Y., …

SPIE-The International Society for Optical Engineering
12 国際会議録 Temperature Dependent Photoluminescence Studies of Molecular Beam Epitaxy Grown Silicon S-Doped Pseudomorphic AIGaAs/InGaAs/GaAs Quantum Wells

Srinivasan, T., Muralidharan, R., Singh, S.N., Mehta, S.K., Jain, R.K.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12