Formation Mechanism of Voids and Oxide Precipitates in Silicon Crystals（Invited Paper）

Formation Mechanism of Voids and Oxide Precipitates in Silicon Crystals（Invited Paper）

著者名:

掲載資料名:

High purity silicon VIII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-05

発行年:

2004

開始ページ:

237

終了ページ:

253

総ページ数:

17

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774185 [1566774187]

言語:

英語

請求記号:

E23400/200405

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015395
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	8th ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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2 国際会議録 The Formation Mechanism of Coupled Voids in Czochralski Silicon Ishikawa,F., Sadohara,S., Saishoji,T., Nakamura,K., Tomioka,J. Electrochemical Society, SPIE-The International Society for Optical Engineering	8 国際会議録 Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals Nakamura, K., Maeda, S., Togawa, S., Saishoji, T., Tomioka, J. Electrochemical Society
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