Effects of Low temperature NH3 Treatment on HfO2/SiO2 Stack Gate Dielectrics Fabricated by MOCVD System

Effects of Low temperature NH3 Treatment on HfO2/SiO2 Stack Gate Dielectrics Fabricated by MOCVD System

著者名:

掲載資料名:

Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-04

発行年:

2004

開始ページ:

434

終了ページ:

442

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774178 [1566774179]

言語:

英語

請求記号:

E23400/200404

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015394
シリーズID:	PA00000028
会議名:	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
回次:	1st ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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