Microstructure Evolution and Breakdown Mechanism Studies in MOSFET with Ultra Thin Gate Dielectrics in Nanometer Technology ERA

Microstructure Evolution and Breakdown Mechanism Studies in MOSFET with Ultra Thin Gate Dielectrics in Nanometer Technology ERA

著者名:

掲載資料名:

Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-04

発行年:

2004

開始ページ:

404

終了ページ:

417

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774178 [1566774179]

言語:

英語

請求記号:

E23400/200404

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015394
シリーズID:	PA00000028
会議名:	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
回次:	1st ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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