Comparison of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate | 東京工業大学附属図書館文献データベース

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Comparison of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate

著者名:

さらに 6 件

掲載資料名:

ULSI Process Integration : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-06

発行年:

2005

開始ページ:

419

終了ページ:

424

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774642 [1566774640]

言語:

英語

請求記号:

E23400/200506

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015389
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	4th ; 207th
会議開催地:	Quebec, Canada
会議開催年:	2005.05.16-2005.05.20

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2 国際会議録 24 Effect of Thin Metal Layers on the Work Function of Polysilicon-Metal Electrode Stacks Alshareef, H., Wen, H.-C., Choi, K., Harris, R., Lysaght, P., Luan, H., Majhi, P., Lee, B.H. Electrochemical Society	8 国際会議録 Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress M. Adi Negara, K. Cherkaoui, P. Majhi, W. Tsai, D. Bauza Electrochemical Society
3 国際会議録 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	9 国際会議録 51. Chargcs in HID2 ALD gate dielcetrics Bersuker, U., Zeitzoff, P., Brown, G., Kim, Y., Hoe, A., Lin, C., Young, C., Lysoght, P., Gardner, M., Murto, R. W, … Electrochemical Society
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