53 Optimizing Channel Strain and Dislocations in PMOS Transistors with Local Epitaxial SiGe

53 Optimizing Channel Strain and Dislocations in PMOS Transistors with Local Epitaxial SiGe

著者名:

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-05

発行年:

2005

開始ページ:

437

終了ページ:

445

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774635 [1566774632]

言語:

英語

請求記号:

E23400/200505

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015388
シリーズID:	PA00000028
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2005 ; 207th
会議開催地:	Quebec City, QC, Canada
会議開催年:	2005.05.16-2005.05.18

類似資料:

1 国際会議録 (3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor Chidambaram, P., Smith, B., Hall, L., Bu, H., Chakravarthi, S., Kim, Y., Samoilov, A., Kim, A., Jones, P., Irwin, R., … Electrochemical Society	7 国際会議録 Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results M. Kim, J. Huang, P. Chidambaram, R. Irwin, P. Jones, J. Weijtmans, E. Koontz, Y. Wang, S. Tang, R. Wise Electrochemical Society
2 国際会議録 12 Performance enhancements for 50-nm PMOS by angled pre-amorphization implants and fluorine implants Chidambaram, P.R., Ekbote, S., Chakravarthi, S., Chatterjee, A., Machala, C.F., Johnson, S.F. Electrochemical Society	8 国際会議録 64 Si:C Epitaxial Wafer for Improved Sub-100nm CMOS Transistor Performance Standley, R., Mansoori, M., Miles, D., Chakravarthi, S., Seacrist, M., Wise, R., Torack, T., Ries, M. Electrochemical Society
3 国際会議録 Modeling Of Diffusion And Activation Of Low Energy Arsenic Implants In Silicon Chakravarthi, Srinivasan, Chidambaram, P.R., Machala, Charles, Jain, Amitabh, Zhang, Xin Materials Research Society	9 国際会議録 Status of infrared detectors (Invited Paper) Norton,P.R. SPIE-The International Society for Optical Engineering
4 国際会議録 Impurity Locking of Dislocations in Silicon （Invited Paper） Giannattasio, A., Murphy, ID., Senkader, S., Falster, R.J., Wilshaw, P.R. Electrochemical Society	10 国際会議録 Optical design for the 5-to 28-μm NGST MIRI spectroscopy channel(MIRI-S)(Invited Paper) Wells, M., Pel, J.-W., Schoenmaker, A., Wright, G.S., Hastings, P.R., Content, R., Peacocke, T. SPIE-The International Society for Optical Engineering
5 国際会議録 Dislocation and strain engineering for SiGe buffer layers on Si (invited paper) Sakai, A., Mochizuki, S., Taoka, N., Nakatsuka,　O., Takeda, S., Kimura, S., Ogawa, M., Zaima, S. Electrochemical Society	11 国際会議録 Current status of COAST (Invited Paper) Baldwin,J.E., Boysen,R.C., Haniff,C.A., Lawson,P.R., Mackay,C.D., Rogers,J., St-Jacques,D., Warner,P.J., Wilson,D.M.A., … SPIE-The International Society for Optical Engineering
6 国際会議録 Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels R. Loo, P. Verheyen, R. Rooyackers, C. Walczyk, F. Leys Electrochemical Society	12 国際会議録 Investigation and Modeling of Fluorine Co-Implantation Effects on Dopant Redistribution Diebel, M., Chakravarthi, S., Dunham, S. T., Machala, C. F., Ekbote, S., Jain, A. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12