29 Influence of Activation Annealing and Silicidation Process on as Redistribution and Pile-up at the NixSiy/SiO2 Interface

29 Influence of Activation Annealing and Silicidation Process on as Redistribution and Pile-up at the NixSiy/SiO2 Interface

著者名:

Pawlak, M.

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-05

発行年:

2005

開始ページ:

241

終了ページ:

248

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774635 [1566774632]

言語:

英語

請求記号:

E23400/200505

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015388
シリーズID:	PA00000028
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2005 ; 207th
会議開催地:	Quebec City, QC, Canada
会議開催年:	2005.05.16-2005.05.18

類似資料:

1 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society	7 国際会議録 30 Study of Stress Evolution during Full Silicidation for Gate Stacks Torregiani, C., Kittl, J. A., Capponi, S., Vanhoyland, G., Brongersma, S., Lauwers, A., Van Houtte, P., Maex, K. Electrochemical Society
2 国際会議録 28 Self-aligned PtSi Fully Silicided (FUST) Metal Gates for 45 nm CMOS Applications van Dal, M.J.H., Lauwers, A., Cunniffe, J., Verbeeck, R., Vrancken, C., Demeurisse, C., Dao, T., Tamminga, Y., Veloso, … Electrochemical Society	8 国際会議録 Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies J. A. Kitti, A. Lauwers, M. van Dal, H. Yu, A. Veloso, T. Hoffinann, M. Pawlak, C. Demeurisse, S. Kubicek, M. Niwa, C. … Electrochemical Society
3 国際会議録 RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and … A. Lauwers, J. Kittl, K. Maex Trans Tech Publications	9 国際会議録 FORMATION OF BURIED α- AND β-FeSi2 IN (100) Si BY HIGH DOSE ION IMPLANTATION Maex, K., Lauwers, A., Van Hove, M., Vandervorst, W., Van Rossum, M. Materials Research Society
4 国際会議録 METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society	10 国際会議録 Control and Impact of Processing Ambient During Rapid Thermal Silicidation Maex, K., Kondoh, E., Lauwers, A., Steegen, A., Potter, M. De, Besser, P., Proost, J. MRS - Materials Research Society
5 国際会議録 A Comparison Of Spike, Flash, SPER and Laser Annealing For 45nm CMOS Lindsay, R., Pawlak, B., Kittl, J., Henson, K., Torregiani, C., Giangrandi, S., Surdeanu, R., Vandervorst, W., Mayur, … Materials Research Society	11 国際会議録 Ni Silicide Morphology On Small Features Chamirian, Oxana, Lauwers, Anne, Kittl, Jorge A., Dal, Mark Van, Potter, Muriel De, Vrancken, Christa, Lindsay, Richard, … Materials Research Society
6 国際会議録 Applications of Ni-Based Silicides to 45 nm CMOS and Beyond Kittl, Jorge A., Lauwers, Anne, Chamirian, Oxana, Pawlak, Malgorzata A., Dal, Mark Van, Akheyar, Amal, Potter, Muriel … Materials Research Society	12 国際会議録 Effects of Alloying on Properties of NiSi for CMOS Applications Dal, Mark van, Akheyar, Amal, Kittl, Jorge A., Chamirian, Oxana, Potter, Muriel De, Demeurisse, Caroline, Lauwers, Anne, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12