Recent Development of CMOS Technology with Hf-Based High-k Dielectric | 東京工業大学附属図書館文献データベース

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Recent Development of CMOS Technology with Hf-Based High-k Dielectric

著者名:

さらに 6 件

掲載資料名:

Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-01

発行年:

2005

開始ページ:

456

終了ページ:

470

総ページ数:

15

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774598 [1566774594]

言語:

英語

請求記号:

E23400/200501

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015386
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films ; Meeting of the Electrochemical Society
回次:	8th ; 207th
会議開催地:	Quebec City, Quebec, Canada
会議開催年:	2005.05.16-2005.05.20

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2 国際会議録 Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability P. Kirsch, M. Quevedo-Lopez, S. Krishnan, S. Song, R. Choi, P. Majhi, Y. Senzaki, G. Bersuker, B. Lee Electrochemical Society	8 国際会議録 Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks Majhi, P., Bersuker, G., Lee, B. H. Springer
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